IMPATT Diode

100 GHz IMPATT Diode

Output power: 
80.00mW
frequency: 
100.00GHz
Output coupler: 
Horn
Flange
Modulation: 
TTL modulation

140 GHz IMPATT diode

Output power: 
30.00mW
frequency: 
140.00GHz
Output coupler: 
Horn
Flange
Modulation: 
TTL modulation


Sub-THz Sources

 


 

 

 

IMPATT technology

 

 

 

100 GHz and 140 GHz

available frequencies

 

 

 

High power output

 

 


 

 

 

Protective isolator

for enhanced stability

 

 

 

Low-cost

 

 

 

1 year warranty

 

Sub-THz IMPATT Sources

 

TeraSense series of terahertz sources (IMPATT diodes) are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+) — and(n+) — regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.

Terasense is now offering its upgraded version of terahertz source. The upgraded IMPATT diode is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order IMPATT diode with either rigidly fixed horn antenna or WR- flange of your choice. Typical output rfpower of THz source with optimized frequency @ 100 GHz can reach up to 100 mW.


 

Download THz IMPATT Diode Datasheet

 


Demonstration of IMPATT Diodes

 

Product Category: 

About us

Ara Scientific ApS is a leader supplier for THz cameras, THz sources, fiber optic spectrometers and their accessories. Being a customer oriented in terms of fast delivery, economic prices, precise and accurate technical quotation is our goal and determines our working strategies. 

There are demo setups available for most of the equipments that we provide. So, in case you are interested to test your ideas or preformance of our products, please do not hesitate to contact us. 

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